Hawkes International Semiconductor - Probing Nano Electronic Device
Characterize silicon and germanium electronic devices based on device physics principles. Analyzing electrical parameters. Identify integration issues. Monitoring fab processes using scribe line monitors (SLM). Segmenting the root causes of device issues.
Si, Ge, III-V, nano electronic devices, semiconductor, device physics, electrical parameters, integration issues, e-test, monitoring fab processes, scribe line monitors (SLM), device performance issues. Silicon, Germanium.
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